Jorge Loayza has a Ph.D. in microelectronics and semiconductor physics, a master’s degree in Nanoscale Enginnering and an Engineer’s Diploma in Materials Engineering with a specialization in semiconductors, devices and nanotechnologies. He obtained these diplomas in INSA de Lyon, France, one of the best French Engineering Schools. He has worked in several laboratories in advanced materials characterization, device modelling and nano-fabrication. Furthermore, he was a part of the I/O team at STMicroelectronics, in particular the ESD (ElectroStatic Discharge) and EOS (Electrical OverStress) topics, researching on innovative devices for the protection of ICs. Finally, he worked at Arm, in the memory team, performing full electrical and performance characterization of SRAM, ROM, Register Files… in the most advanced CMOS technology nodes.